Insulated gate type semiconductor device and method for fabricating the same

ABSTRACT

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 12/962,499filed Dec. 7, 2010, which is a division of application Ser. No.12/868,698 filed Aug. 25, 2010, which is a continuation of applicationSer. No. 12/539,383 filed Aug. 11, 2009, which is a continuation ofapplication Ser. No. 12/037,139 filed Feb. 26, 2008 (now U.S. Pat. No.7,585,732), which is a continuation of application Ser. No. 11/653,404filed Jan. 16, 2007 (now U.S. Pat. No. 7,361,557), which is acontinuation of application Ser. No. 10/984,788 filed Nov. 10, 2004 (nowU.S. Pat. No. 7,172,941), which is a division of application Ser. No.10/046,077 filed Jan. 16, 2002 (now U.S. Pat. No. 6,858,896).

BACKGROUND OF THE INVENTION

The present invention is related to a semi-conductor device, and morespecifically, is directed to a technique capable of being effectivelyapplied to a semiconductor device having a trench-gate structure.

While power transistors are employed in power amplifier circuits, powersupply circuits, converters, power protective circuits and the like,since these power transistors may handle high power, both high breakdownvoltages and high currents are required. In the case that MISFETs (MetalInsulator Semiconductor Field-Effect Transistors) are used, high-currentrequirements may be satisfied by increasing channel widths of theseMISFETs.

Then, in order to avoid that occupied areas of semiconductor chips areincreased by widening such channel widths, for example, mesh-gatestructures are employed. In these mesh-gate structures, the gates arearranged in a lattice (grid) shape so as to increase channel widths perunit chip area FETs having such mesh-gate structures are described in,for instance, “SEMICONDUCTOR HANDBOOK” of Pages 429-430 published byOHM-sha Ltd., in 1981.

Conventionally, among these power FETs, such power FETs having planarstructures have been employed, since the manufacturing steps thereof aresimple and oxide films which constitute gate insulating films can bereadily formed. However, when cell sizes are made small in order tolower resistance values of planar FETs, depletion layers of cellslocated adjacent to each other will extend to contact with each other,so that no current may flow. As a result, even when these planar FETsare tried to be made in very fine manners, resistance values thereofcould not be lowered. This is referred to as the “JFET effect.” As aconsequence, there is a limitation in lowering resistance values ofthese planar FETs by being made in very fine manners.

Accordingly, under such a reason that integration degrees ofsemiconductor cells can be furthermore improved, and in addition, areason that ON-resistance values can be reduced, such FETs havingtrench-gate structures without the so-called JFET effect could beconceived. A trench-gate structure is defined as follows: That is, whilea conductive layer which will constitute a gate is formed via aninsulating film in a trench which is elongated on a major surface of asemiconductor substrate, a deep layer portion of this major surface isemployed as a drain region, a surface layer portion of the major surfaceis employed as a source region, and also a semiconductor layer betweenthe drain region and the source region is used as a channel formingregion. This sort of MISFET having the trench-gate structure isdisclosed in, for instance, JP-A-8-23092.

Also, Inventors of the present invention could invent the techniquecapable of preventing the source offset by making the upper surface ofthe gate conductor layer of the trench-gate structure higher than themajor surface of the semiconductor substrate. This technique is openedin JP-A-12-277531. Also, as to FETs having planar structures,JP-A-9-246550 discloses the technique capable of forming the very finetrench in such a manner that the side wall spacer formed on the gateelectrode on the substrate is employed so as to exceed the processinglimitations.

SUMMARY OF THE INVENTION

An object of the present invention is to provide such a semiconductortechnique capable of reducing an area of a semiconductor chip.

Another object of the present invention is to provide a semiconductortechnique capable of mitigating an adverse influence of thermal stress,while preventing lowering of an avalanche breakdown capability.

In the above-described conventional semiconductor devices, theinsulating film is opened by way of the etching process with employmentof the resist mask formed by way of the photolithography, so that thecontact region with respect to the source region is exposed. As aconsequence, in order to form the contact region, the margin of maskalignment involving dimension errors and errors of this mask alignmentis required. This margin often restricts the occupied area of the FETunit cell. Thus, there is such a limitation that the ON-resistance valueis lowered by reducing the unit cell area.

While the source region is connected to the source region, in such acase that the body contact for electrically connecting the sourceelectrode by the contact hole is carried out also in the contact layerwhich is formed in the channel forming region so as to maintain the basepotential at a constant potential, if the position of the contact holeis positionally shifted, then the distances between the trench gates andthe source electrodes, which are located around the source electrode,are not uniformly made. As a consequence, in the portion where thedistance between the trench gate and the source electrode is long, theresistance value between the emitter and the base is increased, so thatthe feedback amount is increased, and thus, the bipolar transistoreffect may easily occur. Such a stray bipolar transistor could lower theavalanche breakdown capability.

The present invention has been made to solve these problems, andtherefore, has an object to provide such a technique capable ofadvantageously decreasing occupied areas of semiconductor chips.

A typical inventive idea of the present invention disclosed in thespecification will now be simply summarized as follows:

An insulated-gate type semiconductor device, according to an aspect ofthe present invention, is featured by such an insulated-gate typesemiconductor device in which a gate-purpose conductive layer isembedded into a trench which is formed in a semiconductor substrate, anda conductive layer for a source is provided on a major surface of thesemiconductor substrate, wherein: a portion of a gate pillar which isconstituted by both the conductive layer for the gate and a capinsulating film for capping an upper surface of the gate-purposeconductive layer is projected from the major surface of thesemiconductor substrate; a side wall spacer is provided on a side wallof said projected portion of the gate pillar; and the conductive layerfor the source is connected to a contact region of the major surface ofthe semiconductor substrate, which is defined by the side wall spacer.

Also, an insulated-gate type semiconductor device, according to anotheraspect of the present invention, is featured by such an insulated-gatetype semiconductor device comprising: a first semiconductor regionselectively formed in a semiconductor substrate; a second semiconductorregion selectively formed in the first semiconductor region; a trenchwhich is reached from a major surface of the second semiconductor regionto the semiconductor substrate; and a conductive layer which is formedvia an insulating film in the trench; wherein: a gate pillar which isconstituted by the conductive layer and a cap insulating film forcapping an upper surface of the conductive layer owns a pillar which iselongated on a major surface of the second semiconductor region; a sidewall spacer is provided on a side wall of the pillar of the gate pillar;an electrode is connected to the second semiconductor region in acontact region which is defined by the side wall spacer; and thesemiconductor substrate is used as a drain, the conductive layer is usedas a gate, and the second semiconductor region is used as a source.

Also, an insulated-gate type semiconductor device, according to anotheraspect of the present invention, is featured by such an insulated-gatetype semiconductor device comprising: a first conductivity typesemiconductor main body; a second conductivity type first semiconductorregion formed at a predetermined depth within one major surface of thesemiconductor main body, the second conductivity type being opposite tothe first conductivity type; a first conductivity type secondsemiconductor region formed at a predetermined depth within the firstsemiconductor region; a first trench which penetrates the firstsemiconductor region, and is reached from a major surface of the secondsemiconductor region to the semiconductor main body; a pillar gate whichis constituted by both a gate-purpose conductive layer (for the gate)embedded via an insulating film into the first trench and a capinsulating film for capping an upper surface of the gate-purposeconductive layer, and a portion of which pillar gate having a pillarportion projected from the major surface of the second semiconductorregion; and a first electrode which is electrically connected to thesecond semiconductor region in a region between a side wall spacerprovided on a side wall of the pillar portion of the pillar gate, andthe side wall spacer.

Also, an insulated-gate type semiconductor device, according to anotheraspect of the present invention, is featured by such an insulated-gatetype semiconductor device having a longitudinal structure, comprising: asemiconductor main body indicative of a first conductivity type; a firstsemiconductor region indicative of a second conductivity type, which isformed in the semiconductor main body; a second semiconductor regionindicative of the first conductivity type, which is formed in the firstsemiconductor region; and a trench gate which is reached from a majorsurface of the second semiconductor region to the region of thesemiconductor main body; wherein: a portion of a gate pillar which ismade of both the trench gate and an insulating film for covering anupper surface of the trench gate exceeds and is projected from the majorsurface of the second semi-conductor region; a side wall spacer isprovided on a side wall of the projected gate pillar; and a sourceelectrode connected to the semiconductor region is provided on a contactregion defined by the side wall spacer.

Also, an insulated-gate type semiconductor device, according to anotheraspect of the present invention, is featured by such a method formanufacturing an insulated-gate type semiconductor device in which agate-purpose conductive layer is embedded into a trench which is formedin a semiconductor substrate, and a source-purpose conductive layer isprovided on the major surface, comprising: a step for forming a firstsemiconductor region within the semiconductor substrate; a step forforming a trench in the semiconductor substrate in such a manner thatthe trench penetrates the first semiconductor forming region; a step forforming a gate insulating film on a surface of the first semiconductorregion which is exposed within the trench; a step in which the trenchwhere the gate insulating film is formed by a gate pillar made of boththe gate-purpose conductive layer and a cap insulating film for cappingan upper surface of the gate-purpose conductive layer, and a portion ofthe gate pillar is projected from the major surface of the semiconductorsubstrate; a step for forming a second semiconductor region within thefirst semiconductor region which is segmented by the trench; a step forforming a side wall spacer on both the projected conductive layer and aninsulating film for covering an upper surface of the projectedconductive layer; and a step for forming the source-purpose conductivelayer in a source contact region defined by the side wall spacer.

In accordance with the present invention, either the source contactregion or the source contact hole is formed by way of such aself-alignment technique, while the side wall spacer formed on the sidesurface of the gate pillar which is projected from the major surface ofthe semiconductor substrate is employed as the mask. As a result, themargin for the mask alignment is no longer required, so that theoccupied area of the unit cell can be reduced. As a consequence, thesize of the semiconductor chip can be reduced, or the ON-resistancevalue thereof can be lowered.

Also, since the distance between the side surface of the trench andeither the contact or the body contact can be sufficiently shortened, itis possible to avoid lowering of the avalanche breakdown capability,which is caused by the stray bipolar transistor. As a consequence, theavalanche breakdown capability can be secured under stable condition,and the withstanding voltages of the normally available low-mediumwithstanding voltage products can be improved, so that the on-vehicletype power transistors can be manufactured on the same semiconductorchips in combination with other electronic components, although theseon-vehicle type power transistors have been conventionally provided inthe separate manner. As a result, the development TAT of theseon-vehicle type power transistors can be shortened, so that the productscan be marketed in earlier stages, and furthermore, the development costthereof can be reduced.

The cap insulating film for caping the upper surface of the gateelectrode can be formed with arbitrarily-selected thicknesses thereof byemploying the deposited film by way of the CVD method, or the like. Thewidth of the side wall spacer which covers the side walls of both thegate electrode and the cap insulating film can be formed as thearbitrarily-selected width by the film thickness of the silicon oxidefilm and the like, which are processed by the etching back operation.Since the side wall spacer is formed on the side surface of the gatepillar, the insulating film can be formed in a semi-circular shape, andalso the intervals between the end portions of the gate electrodes andthe source electrodes located around these gate electrodes can be madeuniform. In addition, both the cap insulating film and the side wallspacer are made in an integral form by such a continuous plane where nostepped portion is formed. As a result, the adverse influence caused bythe thermal stress can be reduced.

Next, effects which can be achieved by the typical embodiment modes ofthe present invention will now be simply explained as follows:

(1) According to the insulated-gate type semiconductor device of thepresent invention, there is such an effect that the source contact canbe formed by way of the self-alignment manner with employment of theside wall spacer.

(2) In accordance with the present invention, since the above-describedeffect (1) can be obtained, another effect may be achieved. That is, themargin for the mask alignment purpose is no longer required, and alsothe occupied area of the unit cell can be reduced.

(3) In accordance with the present invention, since the above-describedeffect (2) can be obtained, another effect may be achieved. That is, thesize of the semiconductor chip can be reduced, or the ON-resistancevalue can be lowered.

(4) In accordance with the present invention, since the above-describedeffect (1) can be obtained, another effect may be achieved. That is, thedistance between the side surface of the trench and either the contactor the body contact can be sufficiently shortened.

(5) In accordance with the present invention, since the above-describedeffect (4) can be obtained, another effect may be achieved. That is, itis possible to avoid lowering of the avalanche break-down capability,which is caused by the parasitic (stray) bipolar transistor.

(6) In accordance with the present invention, since the side wall spaceris formed on the side surface of the gate pillar, the insulating filmcan be formed in a semi-circular shape, and also the intervals betweenthe end portions of the gate electrodes and the source electrodeslocated around these gate electrodes can be made uniform. In addition,there is a further effect that both the cap insulating film and the sidewall spacer are made in an integral form by such a continuous planewhere no stepped portion is formed, so that the adverse influence causedby the thermal stress can be reduced.

The above-described objects and other novel features of the presentinvention may become apparent from a detailed description and theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view for showing a semi-conductor device according toan embodiment of the present invention;

FIG. 2 is an equivalent circuit diagram of the semiconductor deviceaccording to the embodiment of the present invention;

FIG. 3 is a plan view for partially indicating a major portion of thesemiconductor device according to the embodiment of the presentinvention;

FIG. 4 is a longitudinal sectional view for showing the semiconductordevice, taken along a line “a-a” of FIG. 3;

FIG. 5 is a longitudinal sectional view for showing the semiconductordevice, taken along a line “b-b” of FIG. 3;

FIG. 6 is a longitudinal sectional view for showing the semiconductordevice, taken along a line “c-c” of FIG. 3;

FIG. 7 is a longitudinal sectional view for representing a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 8 is a longitudinal sectional view for indicating a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 9 is a longitudinal sectional view for representing a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 10 is a longitudinal sectional view for indicating a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 11 is a longitudinal sectional view for representing a majorportion of the semiconductor device at each manufacturing step,according to the embodiment of the present invention;

FIG. 12 is a longitudinal sectional view for indicating a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 13 is a longitudinal sectional view for representing a majorportion of the semiconductor device at each manufacturing step,according to the embodiment of the present invention;

FIG. 14 is a longitudinal sectional view for indicating a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 15 is a longitudinal sectional view for representing a majorportion of the semiconductor device at each manufacturing step,according to the embodiment of the present invention;

FIG. 16 is a longitudinal sectional view for indicating a major portionof the semiconductor device at each manufacturing step, according to theembodiment of the present invention;

FIG. 17 is a longitudinal sectional view for showing a major portion ofa semiconductor device according to another embodiment of the presentinvention;

FIG. 18 is a longitudinal sectional view for indicating a major portionof the semiconductor device according to the embodiment of the presentinvention;

FIG. 19 is a longitudinal sectional view for showing a major portion ofa semiconductor device according to another embodiment of the presentinvention;

FIG. 20 is a longitudinal sectional view for indicating a major portionof the semiconductor device according to the embodiment of the presentinvention; and

FIG. 21 is a longitudinal sectional view for showing a major portion ofa semiconductor device according to a further embodiment of the presentinvention.

DESCRIPTION OF THE EMBODIMENTS

Referring now to drawings, various embodiments of the present inventionwill be described.

It should be understood that the same reference numerals will beemployed as those for denoting the same, or similar functional elementsin all of the relevant drawings used to explain various embodiment modesof the present invention, and explanations thereof are only made once.

Embodiment Mode 1

FIG. 1 is a plan view for representing a longitudinal type power MISFEThaving a trench-gate corresponding to a semiconductor device accordingto an embodiment mode 1 of the present invention. FIG. 2 is anequivalent circuit diagram for illustratively representing this powerMISFET. FIG. 3 is a plan view of indicating a major portion “a” shown inFIG. 1, while this major portion “a” is enlarged. FIG. 4 is alongitudinal sectional view of the power MISFET, taken along a line “a”to “a” of FIG. 3. FIG. 5 is a longitudinal sectional diagram of thepower MISFET, taken along a line “b” to “b” of FIG. 3. FIG. 6 is alongitudinal sectional diagram for representing the MISFET, taken alonga line “c” to “c” of FIG. 3.

The MISFET of this embodiment mode 1 is manufactured on such a substratethat, for example, an epitaxial layer 2 is formed on an n⁺ typesemiconductor substrate made of monocrystal silicon. This MISFET isformed within a region which is surrounded by a plate-shaped fieldinsulating film 3 (indicated by double hatched line also in FIG. 3), andcontains a rectangular portion inside a corner portion. The plate-shapedfield insulating film 3 is provided in a rectangular-shaped ring alongan outer peripheral portion of the semiconductor substrate.

Within the above-described region, a plurality of cells havingtrench-gate structures are arranged in a regular manner. A plane shapeof these cells is formed to be a rectangle. While the respective gatesare arranged in a grid (lattice) shape, as viewed in the plane, therespective cells are connected to each other in a parallel manner by wayof a mesh-gate structure.

Each of these cells constitutes a longitudinal FET manufactured by thatan n⁻ type first semiconductor layer 2 a formed on the semiconductorsubstrate 1 constitutes a drain region, a p type second semiconductorlayer 2 b formed on the first semiconductor layer 2 a constitutes a baseregion where a channel is formed, and an n⁺ type third semiconductorlayer 2 c formed on the second semiconductor layer 2 b constitutes asource region.

A gate conductive layer 4 is formed via a gate insulating film 5 in atrench which is reached to the n⁻ type first semiconductor layer 2 aconstituting the drain region from the major surface of thesemiconductor substrate. As the gate conductive layer 4, for instance,polycrystal silicon into which an impurity has been conducted isemployed, whereas as the gate insulating film 5, this film 5 isconstituted by a multilayer film manufactured in such a manner that, forexample, a thermal oxidation film having a thickness of on the order of27 nm, and also a deposited film having a thickness of on the order of50 nm are sequentially formed. While a shape of a cell is maderectangular, a side surface of each of the semiconductor layers 2 a, 2b, and 2 c is formed in either a stripe shape or a mesh shape on eithera crystalline surface (100) or another plane equivalent to thiscrystalline surface (100) plane, so that carriers are moved along theabove-described crystalline surface (100), or the plane equivalent tothis crystalline surface (100) by an electric field of the gateconductive layer 4. As a result, mobility can be improved.

An upper surface of the gate conductive layer 4 according to thisembodiment mode 1 is covered, or capped by a cap insulating film 6, anda gate pillar which is constructed of both the gate conductive layer 4and the cap insulating film 6 is formed and located higher than thesurface of the third semiconductor layer 2 c which constitutes thesource region, namely, higher than the major surface of thesemiconductor substrate. A side wall spacer 7 is formed on a side wallof such a portion of the gate pillar, which is projected from the majorsurface of the semiconductor substrate. In this semiconductor structure,in the case that a portion of the gate conductor layer 4 is made higherthan the major surface of the semiconductor substrate, even when thesource region is made shallower, it is possible to avoid such a sourceoffset that the gate conductor layer 4 is deviated from the sourceregion. Alternatively, this semiconductor structure may be formed bythat only the cap insulating film 6 is projected.

As indicated in FIG. 3, the gate conductive layers 4 of the cells whichare located to each other are mutually connected with each other. Therespective gate conductor layers 4 of such cells which are located onthe outer peripheral portion are connected to a gate wiring line 8using, for instance, polycrystal silicon in the vicinity of the outerperipheral portion of the semiconductor chip.

The gate wiring line 8 is formed via an interlayer insulating film 9 onan upper layer, and is electrically connected to a gate guard ring 10(this gate guard ring being partially shown by broken line in FIG. 3)using, for instance, aluminum containing silicon. The gate guard ring 10is formed with a rectangular-shaped gate electrode 11 in an integralmanner. This rectangular-shaped gate electrode 11 is provided on arectangular portion of a corner portion of the field insulating film 3,and is partially indicated by a broken line in FIG. 3. Also, aconnection region (denoted by broken line shown in FIG. 1) of the gateconductive layer 4 is provided on the gate electrode 11.

A conductive layer 12 used for the source region is electricallyconnected to the third semiconductor layer 2 c which constitutes thesource region. This source-purpose conductive layer 12 employs, forexample, aluminum containing silicon, and is partially indicated by abroken line in FIG. 3. The source-purpose conductive layer 12 isconnected to a contact region (shown by broken line in FIG. 1) of thethird semiconductor layer 2 c which is defined by the side wall spacer7. In order to maintain a base potential at a constant potential, thissource-purpose conductive layer 12 is similarly and eclecticallyconnected to a p⁺ type contact layer 13 which is provided in the secondsemiconductor layer 2 b in addition to the third semi-conductor layer 2c which constitutes the source region.

Also, as indicated in FIG. 2, FIG. 3, or FIG. 6, a protective diode 14having a back-to-back structure is provided between the gate electrode11 and the source-purpose conductive layer 12, and this protective diode14 may prevent the gate insulating film 5 from being brought into abreakdown state with respect to surge energy applied from the source.FIG. 6 is a longitudinal sectional view for showing the protective diode14, while enlarging this protective diode 14. The protective diode 14 isconstructed in such a manner that N⁺ type semiconductor regions 14 a andp type semiconductor regions 14 b are alternatively formed in a coaxialring shape, and both the gate electrode 11 and the source-purposeconductive layer 12 are electrically connected to the n⁺ typesemiconductor regions 14 a located on both ends, respectively.

Also, a source guard ring 15 is provided at the outer peripheral portionof the field insulating film 3. In this source guard ring 15, a wiringline 15 b (this wiring line is partially indicated by broken line inFIG. 3) using, for instance, aluminum containing silicon is connected toan n⁺ type semiconductor region 15 a which is formed on the majorsurface of the semiconductor substrate. Similar to the source-purposeconductive layer 12, this wiring line 15 b of the source guard ring 15is connected to the n⁺ type semiconductor region 14 a of the protectivediode 14.

It should also be noted that both the gate wiring line 6 and the gateguard ring 10 are formed on the field insulating film 3 which is formedin the rectangular ring shape, and both the gate electrode 11 and theprotective diode 14 are formed on the rectangular portion provided atthe corner portion of the field insulating film 3.

Also, along the field insulating film 3 formed in the rectangular ringshape, a p type well 16 is formed in a lower portion of this fieldinsulating film 3. Since a termination portion of the gate conductivelayer 4 is connected via the gate insulating film 5 to this p type well16, a depletion layer which is present under the field insulating film 3is gently extended in order to avoid the discontinuity of this depletionlayer. As a consequence the p type well 16 may function as an electricfield relaxing portion capable of relaxing an electric field of thetermination portion of the gate conductive layer 4.

A protective insulating film 17 is formed on an entire surface of themajor surface of the semiconductor substrate, while this protectiveinsulating film 17 covers the gate guard ring 8, the gate electrode 9,the source-purpose conductive layer 12, and the source guard ring 15.The protective insulating film 17 employs both a silicon oxide film andpolyimide, and is manufactured by way of such a plasma CVD method, forinstance, while tetraethoxysilane (TEOS) gas is employed as a subject ofsource gas. An opening is formed in this protective insulating film 17,and this opening may partially expose both gate electrode 9 and thesource-region conductive layer 12. Then, both the gate electrode 9 andthe source-purpose conductive layer 12, which are exposed via thisopening, may constitute a connection region for both a gate and asource, to which electric connections are carried out by a wire bondingmanner, and the like.

As a connection region as a drain, a drain electrode 18 which isconducted to the n⁺ type semiconductor substrate 1 is formed on anentire surface of a rear surface of the semiconductor substrate in theform of either a metal layer or a stacked film layer. This metal layeris formed in such a manner that for example, nickel, titanium, nickel,and silver are sequentially stacked. The stacked layer is formed in sucha manner that titanium, nickel, and gold are sequentially stacked. Thesurface of this drain electrode 18 using either silver or gold isconnected to a lead frame by way of, for example, an adhesive materialhaving a conductive characteristic, so that electric connections may becarried out.

Referring now to FIG. 7 to FIG. 16, a description is made of a methodfor manufacturing the above-described semiconductor device.

First, an n⁻ type epitaxial layer 2 having a thickness of on the orderof 5 μm is formed by employing an epitaxial growth on an n⁺ typesemiconductor substrate 1 made of monocrystalline silicon into whicharsenic (As) is conducted. The concentration of this n⁻ type epitaxiallayer 2 is lower than that of the semiconductor substrate 1. As aresult, such a semi-conductor substrate which is constituted by both thesemiconductor substrate 1 and the epitaxial layer 2 is prepared.Subsequently, an silicon oxide film having a thickness of on the orderof 600 nm is formed on a major surface of this semiconductor substrateby way of, for example, a thermal oxidation method. A mask is formed onthis silicon oxide film by way of a photo-lithography. A plate-shapedfield insulating film 3 is formed in a rectangular ring shape along anouter peripheral portion of the semiconductor substrate, while thisplate-shaped field insulating film 3 owns a rectangular portion inside acorner portion thereof. Thereafter, a mask is formed by way of thephoto-lithography along an inner peripheral portion of this fieldinsulating film 3. While ions of, for instance, boron (B) is implantedby using this mask so as to diffuse the conducted impurity, a p typewell 16 is formed which may constitute an electric field relaxingportion. It should also be noted that impurity concentration of the ptype well 16 is made equal to, or lower than, for example, the impurityconcentration of the second semiconductor layer 2 b.

Subsequently, an insulating film 19 having a relatively thick thicknessis formed on the major surface of the semiconductor substrate. A thermaloxide film having a thickness of 40 nm, polycrystal silicon (i-poly Si)having a thickness of 600 nm and containing no impurity, and a siliconoxide film having thickness of 500 nm are stacked. A resist mask 20 isformed by way of the photolithography on the insulating film 19 within acell forming region which is surrounded by the field insulating film 3.This resist mask 20 opens a pattern of a gate conductive layer 4 havinga mesh-gate structure in which the respective gates are arranged in alattice (grid) form in the two-dimensional manner. Another opening isformed in the insulating film 19 by executing an etching method, whilethis resist mask 20 is employed. This opening may expose the majorsurface of the semiconductor substrate of the above-explained pattern.FIG. 7 represents a portion of the gate conductive layer under thiscondition, while this layer portion is enlarged.

Next, while the insulating film 19 in which the opening is formed isemployed as a mask, a trench (namely, trench 2A) having a depth of, forexample, on the order of 1.6 μm is formed in the major surface of thesemiconductor substrate by way of a dry etching process. This conditionis indicated in FIG. 8. It should also be noted that since this etchingprocess is performed by executing an isotropic etching process by a wetetching process at first, and by executing an anisotropic etchingprocess by a dry etching process, both a bottom surface of the trenchand a corner portion of an edge portion thereof are relaxed which areformed as indicated in FIG. 9.

Next, a gate insulating film 5 is formed in which a silicon oxide filmhaving a thickness of 50 nm is stacked on a thermal oxide film having athickness of 27 nm by way of a CVD (Chemical Vapor Deposition) method. Apolycrystal silicon film 4′ which constitutes a conductive film of thegate conductive layer 4 is formed on an entire surface of the majorsurface of the semiconductor substrate including the inside of theabove-explained trench by way of the CVD method. The formation of thispolycrystal silicon film 4′ is subdivided into two stages, while beingcarried out. For instance, a polycrystal silicon film having a thicknessof 300 nm is formed at the first stage, whereas a polycrystal siliconfilm having a thickness of 300 nm is formed at the second stage.Thereafter, an anealing process operation is carried out at thetemperature of approximately 950° C. and for a time duration ofapproximately 10 minutes. Since the above-described film depositions bythe two stages are carried out, such a gate conductive layer having nocavity is formed within the trench. An impurity (for example,phosphorus) capable of reducing a resistance value is conducted intothis polycrystal silicon film 4′ either during deposition thereof, orafter this deposition. The concentration of this impurity is selected tobe 1 E18/cm³ to 1 E21/cm³. This state is indicated in FIG. 10.

Subsequently, the polycrystal silicon film 4′ shown in FIG. 10 is etchedback. This etching-back operation of the polycrystal silicon film 4′carried out at such a degree that an upper edge of the polycrystalsilicon film 4′ is left within the opening portion of the insulatingfilm 19. The gate conductive layer 4 is formed within theabove-explained trench, and then, a silicon oxide film 6′ is depositedon an entire surface in this manner. This state is shown in FIG. 11.

Next, the silicon oxide film 6′ is etched so as to be removed, so that acap insulating film 6 is formed, and this cap insulating film 6 caps anupper surface of the gate conductive layer 4. Since the silicon oxidefilm of the insulating film 19 is made thin by executing this etchingprocess operation, the polycrystal silicon of the insulating film 19 isremoved by utilizing a difference in an etching selective ratio of thesilicon oxide and the polycrystal silicon; a gate pillar made of boththe gate conductor layer 4 and the cap insulating film 6 is projectedfrom the major surface of the semiconductor substrate in a pillar form;while this gate pillar is employed as a mask, ions of a p type imparity(for example, boron) are implanted into an entire surface of theepitaxial layer 2; and a diffusion process operation (first thermalprocess operation) is carried out for a time duration of approximately100 minutes within such a nitrogen gas atmosphere (at temperature of onthe order of ° C.) containing 1% O₂, so that a p type secondsemi-conductor layer 2 b is formed, and constitutes a channel formingregion. Subsequently, ions of an n type impurity (for example, arsenic)are selectively implanted; and an annealing process operation (secondthermal process operation) is carried out for a time duration ofapproximately 30 minutes within such a nitrogen gas atmosphere (attemperature of on the order of 950° C.) containing 1% O₂, so that athird semiconductor layer 2 c is formed and constitutes a source region.Then, a deep portion of the epitaxial layer 2, into which theseimpurities are not conducted, may constitute a first semiconductor layer2 a functioning as a drain region. Concretely speaking, this deepportion corresponds to such an epitaxial layer 2 which is locatedbetween the second semiconductor layer 2 b and the semiconductorsubstrate 1. This state is indicated in FIG. 12.

Next, a silicon oxide film is deposited on an entire surface of theresulting semiconductor substrate, and then is removed by performing anetching process so as to form a side wall spacer 7 on a side surface ofthe above-explained gate pillar. This state is indicated in FIG. 13.

Next, while the side wall spacer 7 is employed as a mask, an etchingprocess is carried out so as to form a contact hole. Then, a p typeimpurity such as boron is directly conducted into such a secondsemiconductor layer 2 b which is exposed by the contact hole, so that ap type contact layer 13 is formed. This state is represented in FIG. 14.

Also, after the contact hole has been formed, as shown in FIG. 15, anetching process is carried out in such a manner that the silicon oxideof the side wall spacer 7 is selectively removed with respect to thesilicon of the major surface of the semiconductor substrate, so that theside wall spacer 7 is moved along a backward direction, and the surfaceof the third semiconductor layer 2 c is exposed with respect to thecontact hole in a self-alignment manner. As a result, a contact areabetween the third semiconductor layer 2 c and the source-regionconductive layer 12 is enlarged, so that a contact resistance value maybe reduced.

Next, a conductive film (metal film) made of, for instance, aluminiumcontaining silicon is formed on an entire surface on the major surfaceof the semiconductor substrate containing the inside portion of thecontact hole, and this metal film is patterned in order to form a gateguard ring 10, a gate electrode 11, a source-purpose conductive layer12, and a source guard ring 15. This state is shown in FIG. 16.

Next, polyimide is coated and stacked on a silicon oxide film byperforming a plasma CVD method with employment of, for example,tetraethosysilane (TEOS) gas functioning as a subject of source gas, sothat a protective insulating film 17 is formed, and this protectiveinsulating film 17 covers an entire surface of the major surface of thesemiconductor substrate. An opening is formed in this protectiveinsulating film 17, and this opening is used to expose theabove-described connection region between the gate electrode 11 and thesource-region conductor layer 12; a polishing process operation iscarried out with respect to rear surface of the n⁺ type semiconductorsubstrate 1; and then, a drain electrode 18 is formed on this rearsurface by way of, for example, a vapor deposition manner, whichconstitutes such a conduction shown in FIG. 4.

Embodiment Mode 2

A semiconductor manufacturing method according to an embodiment mode 2of the present invention owns only such a different technical methodfrom that of the above-described embodiment mode 1, namely a method offorming a cap insulating film 6. However, other manufacturing methods ofthis embodiment mode 2 are substratially identical to those of theembodiment mode 1.

The method for manufacturing the semiconductor device according to theembodiment mode 2 will now be explained with reference to FIG. 7 to FIG.10, and FIG. 17 to FIG. 20.

First, as indicated in FIG. 7, an insulating film 19 having a relativelythick thickness and made of a silicon oxide film having a thickness of900 nm is formed on a major surface of a semiconductor substrate. Aresist mask 20 is formed by way of the photolithography on theinsulating film 19 within a cell forming region which is surrounded by afield insulating film 3. This resist mask 20 opens a pattern of a gateconductive layer 4 having a mesh-gate structure in which the respectivegates are arranged in a lattice (grid) form in the two-dimensionalmanner. Another opening is formed in the insulating film 19 by executingan etching method, while this resist mask 20 is employed. Then, similarto the above-described embodiment mode 1, as indicated in FIG. 8 andFIG. 9, while the insulating film 19 in which the opening is formed isemployed as a mask, a trench 2A having a depth of, for example, on theorder of 1.6 μm is formed in the major surface of the semiconductorsubstrate by way of a dry etching process. Next, a gate insulating film5 is formed in which a silicon oxide film having a thick-ness of 50 nmis stacked on a thermal oxide film having a thickness of 27 nm by way ofa CVD (Chemical Vapor Deposition) method on the surface within thetrench 2A. A polycrystal silicon film 4′ is deposited on an entiresurface of the major surface of the semiconductor substrate includingthe inside of the above-explained trench, as indicated in FIG. 10. Then,this poly-crystal silicon film 4′ is removed by executing an etchingprocess, a gate conductive layer 4 is formed within this trench, andthis polycrystal silicon film 4′ is etched back, so that the gateconductive layer 4 is formed inside the above-described trench, and asilicon oxide film 6 a is formed on an upper surface of this gateconductive layer 4 by way of a thermal oxidation. This state isindicated in FIG. 17.

Next, a silicon nitride film 6 b having a thickness of on the order of50 nm is deposited on an entire surface containing an upper surface ofthe silicon oxide film 6 a, and furthermore, the silicon oxide film 6 cwhich is deposited on the silicon oxide film 6 b is removed by way of anetching process, so that the silicon oxide film 6 c is embedded withinthe trench. Thereafter, a non-doped polycrystal silicon film 6 d whichhas been deposited over the entire surface is removed by way of anetching process operation, so that the polycrystal silicon film 6 d isembedded into the trench. This state is indicated in FIG. 18.

Next, while utilizing an etching selective ratio of the silicon nitridefilm 6 b to the polycrystal silicon film 6 d, the insulating film 19 isselectively removed; a gate pillar made of both the gate conductor layer4 and the cap insulating film 6 is projected from the major surface ofthe semiconductor substrate in a pillar form; while this gate pillar isemployed as a mask, ions of a p type impurity (for example, boron) areimplanted into an entire surface of the epitaxial layer 2; and adiffusion process operation (first thermal process operation) is carriedout for a time duration of approximately 100 minutes within such anitrogen gas atmosphere (at temperature of about 1100° C.) containing 1%O₂, so that a p type second semiconductor layer 2 b is formed, andconstitutes a channel forming region. Subsequently, ions of an n typeimpurity (for example, arsenic) are selectively implanted; and anannealing process operation (second thermal process operation) iscarried out for a time duration of approximately 30 minutes within sucha nitrogen gas atmosphere (at temperature of on the order of 950° C.)containing 1% O₂, so that a p type second semiconductor layer 2 b isformed, and constitutes a channel forming region. Subsequently, ions ofan n type impurity (for instance, arsenic) are selectively implanted;and an annealing process operation (second thermal process operation) iscarried out for a time duration of approximately 30 minutes within sucha nitrogen gas atmosphere (at temperature of on the order of 950° C.)containing 1% O₂, so that a third semiconductor layer 2 c is formed andconstitutes a source region.

Then, a deep portion of the epitaxial layer 2, into which theseimpurities are not conducted, may constitute a first semiconductor layer2 a functioning as a drain region. Concretely speaking, this deepportion corresponds to such an epitaxial layer 2 which is locatedbetween the second semiconductor layer 2 b and the semiconductorsubstrate 1. This state is indicated in FIG. 19.

Next, a silicon oxide film is deposited on an entire surface of theresulting semiconductor substrate, and then is removed by performing anetching process so as to form a side wall spacer 7 on a side surface ofthe above-explained gate pillar. This state is indicated in FIG. 20. Thesteps subsequent to this step are similar to those of theabove-explained embodiment mode 1. In accordance with this embodimentmode 2, since the thickness of the silicon nitride film 6 b which mayconstitute the etching stopper is thin, a thickness of such a siliconnitride film which is formed on the rear surface can be made thinner. Asa result, there is such an effect that stress of the rear surface can berelaxed.

Embodiment Mode 3

FIG. 21 is a longitudinal sectional view for indicating a modificationof the above-explained gate pillar structure in the embodiment mode 1.In this modified gate pillar structure, an upper end of a gateconductive layer 4 is located lower than a major surface of asemiconductor substrate, but a portion of a cap insulating film 6 ismade higher than the major surface of the semiconductor substrate.Structures of this semiconductor device other than this modified gatepillar structure are similar to those shown in the embodiment mode 1.

In accordance with the structure of this embodiment mode 3, since athickness of the cap insulation film 6 is made thick, electricinsulating characteristics between the gate and the source can besufficiently secured. It should also be understood that a specific careshould be taken to the following aspect. That is to say, the gateconductive layer 4 made in contact with the gate insulating film 5 isnot brought into the offset state with respect to the source region 2 c.

While the present invention has been described in detail based upon theabove-explained embodiment modes, the present invention is not limitedto these embodiment modes, but may be modified, changed, and substitutedwithout departing from the technical scope and spirit of the presentinvention.

For instance, the inventive idea of the present invention may be appliednot only to power MISFETs, but also to IGBTx (Integrated Gate BipolarTransistors) and the like.

1. A method of manufacturing a semiconductor device including a MISFET,comprising the steps of: (a) providing a semiconductor substrate of afirst conductivity type; (b) forming a first trench in the semiconductorsubstrate; (c) embedding a first conductive film in the first trench;(d) forming a first impurity region of a second conductivity typeopposite the first conductivity type in the semiconductor substrate,wherein a depth of the first impurity region is shallower than a depthof the first trench; (e) forming a second impurity region of the firstconductivity type in the semiconductor substrate, wherein a depth of thesecond impurity region is shallower than the depth of the first impurityregion; (f) forming a first insulating film over the second impurityregion; (g) forming a second trench by using the first insulating filmas a mask in the semiconductor substrate, wherein the second trenchpenetrates the second impurity region and reaches the firstsemiconductor impurity region, and wherein a depth of the second trenchis shallower than a depth of the first trench; (h) forming a thirdimpurity region of the second conductivity type in the first impurityregion located at a bottom of the second trench, wherein an impurityconcentration of the third impurity region is higher than an impurityconcentration of the first impurity region; (i) after step (h),recessing the first insulating film, thereby exposing a portion of asurface of the second impurity region; and (j) after step (i), forming asecond conductive film in the second trench, wherein the secondconductive film is electrically connected with the exposed surface ofthe second impurity region outside of the second trench and iselectrically connected with the first, second, and third impurityregions inside of the second trench.
 2. A method of manufacturing asemiconductor device according to claim 1, wherein a cap film is formedover a top surface of the first conductive film.
 3. A method ofmanufacturing a semiconductor device according to claim 1, wherein thefirst conductive film includes a poly-silicon film.
 4. A method ofmanufacturing a semiconductor device according to the claim 1, whereinthe first insulating film includes a silicon oxide film.
 5. A method ofmanufacturing a semiconductor device including a MISFET, comprising thesteps of: (a) providing a semiconductor substrate; (b) forming a firsttrench in the semiconductor substrate; (c) forming a first conductivefilm as a gate electrode of the MISFET in the first trench; (d) forminga first impurity region of p-type as a channel region of the MISFET inthe semiconductor substrate, wherein a depth of the first impurityregion is shallower than a depth of the first trench; (e) forming asecond impurity region of n-type as a source region of the MISFET in thesemiconductor substrate, wherein a depth of the second impurity regionis shallower than the depth of the first impurity region; (f) forming afirst insulating film over the second impurity region; (g) forming asecond trench by using the first insulating film as a mask in thesemiconductor substrate, wherein the second trench penetrates the secondimpurity region and reaches the first semiconductor impurity region, andwherein a depth of the second trench is shallower than a depth of thefirst trench; (h) forming a third impurity region of p-type in the firstimpurity region located at a bottom of the second trench, wherein animpurity concentration of the third impurity region is higher than animpurity concentration of the first impurity region; (i) after step (h),recessing the first insulating film, thereby exposing a portion of asurface of the second impurity region; and (j) after step (i), forming asecond conductive film in the second trench, wherein the secondconductive film is electrically connected with the exposed surface ofthe second impurity region outside of the second trench and iselectrically connected with the first, second, and third impurityregions inside of the second trench.
 6. A method of manufacturing asemiconductor device according to claim 5, wherein a cap film is formedover a top surface of the first conductive film.
 7. A method ofmanufacturing a semiconductor device according to claim 5, wherein thefirst conductive film includes a poly-silicon film.
 8. A method ofmanufacturing a semiconductor device according to claim 5, wherein thefirst insulating film includes a silicon oxide film.